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| QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Description: Powerex Dual MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other components on a common heatsink. Features: Typical RDS(on) = 0.0055 Extremely High dv/td Capability Fast Body-Drain Diode Isolated Baseplate for Easy Heat Sinking Low Thermal Impedance Isolated Material: DBC Alumina (4) STY100NS20FD Chips per MOSFET Switch Applications: High Current, High Speed Switching Motor Drive DC-AC Converter for Welding Equipment Switch Mode Power Supply Dim A B C D E F G H J Inches 4.25 2.44 1.14+0.04/-0.02 3.660.01 1.880.01 0.67 0.16 0.24 0.59 Millimeters 108.0 62.0 29+1.0/-0.5 93.00.25 48.00.25 17.0 4.0 6.0 15.0 Dim K L M N P Q R S T Inches 0.55 0.87 0.33 0.10 0.85 0.98 0.11 0.25 Dia. 0.6 Millimeters 14.0 22.0 8.5 2.5 21.5 25.0 2.8 6.5 Dia. 15.15 Preliminary Page 1 7/10/2002 QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Maximum Ratings, Tj=25C unless otherwise specified Ratings Drain-source voltage, VGS=0V Gate-source voltage Drain Current at Tc = 25C Drain Current at Tc = 100C Max Operating Junction Temperature Storage Temperature Mounting Torque, M6 Terminal Screws Mounting Torque, M6 Mounting Screws Module Weight (Typical) V Isolation Symbol VDSS VGSS ID ID Tj Tstg VRMS QJD0240002 200 20 400 252 150 -40 to 125 40 40 400 2000 Units Volts Volts Amperes Amperes C C In-lb In-lb Grams Volts Static Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Drain-source breakdown voltage Drain leakage current Drain leakage current at Tc = 125C Gate leakage current Gate-source threshold voltage Drain-source on state resistance Drain-source on-state voltage Forward On Voltage MOS Diode Symbol V(BR)DSS IDSS IDSS IGSS VGS(th) RDS(ON) VDS (ON) VSD Test Conditions ID=1mA, VGS=0V VDS=200V, VGS=0V VDS=200V, VGS=0V VGS=20V,VDS=0V ID=1mA, VDS=10V ID=200A, VGS=10V ID=200A, VGS=10V ISD=400A, VGS=0V Min. 200 3.0 Typ. 4.0 5.5 1.1 Max. 40 400 400 5.0 6.0 1.2 1.6 Units Volts A A nA Volts m Volts Volts Dynamic Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn- off Delay Time Fall Time Reverse Recovery Time MOS Diode Reverse Recovery Charge MOS Diode Reverse Recovery Current MOS Diode Symbol Ciss Coss Crss td(on) tr td(off) tf trr Qrr IRRM Test Conditions VDS=25V VGS=0V f=1MHz VDD=100V ID=200A VGS=10V RG=4.7 ISD=400A di/dt=400A/s VDD=160V Tj=150C Min. Typ. 31600 6000 1840 TBD TBD TBD TBD 225 5.4 48 Max. Units pF pF pF ns ns ns ns ns C Amperes Thermal Characteristics, Tj=25C unless otherwise specified Characteristic Thermal Resistance, Channel to Case Contact Thermal Resistance (Thermal Grease Applied) Symbol R(ch-c) RCF Test Conditions Per Mosfet Per Module Min. Typ. 0.08 0.020 Max. TBD Units C/W C/W Preliminary Page 2 7/10/2002 |
Price & Availability of QJD0240002
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